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8NM120G-TF1-T N-channel Super-Junction MOSFET 8A 1200V

Sku:

8NM120G-TF1-T

Features
  • Fast switching capability
  • Avalanche energy tested
  • Improved dv/dt capability, high ruggedness
  • Low Cost

Unisonic Super Junction MOSFETs have low on-state resistance and high voltage ratings with rugged avalanche characteristics. They are designed for fast and efficient switching with low gate charge and fast recovery times.

Super Junction Silicon MOSFETs offer a cost advantage over Silicon Carbide (SiC) and Gallium Nitride (GaN) MOSFETs.

They are ideally suited to power conversion in AC-DC converters and high voltage DC-DC Converters.

Technical Specification
Drain Source Voltage 1200V
Drain Current 8A
Power 29W
On-state Resistance 1.35Ω
Reverse Recovery Time -
Total Gate Charge (Qg) 52nC
Part Description Super-junction MOSFET

Applications

US/Canadian Customers

Orders below $110.00 can be delivered by Airmail at a rate of $9.00 (allow up to 10 working days) or by tracked courier at a rate of $30.00 (1-3 working days).

Orders above $110.00 are delivered by a tracked courier at a rate of $30.00 (1-3 working days).

 

Rest of World

Orders below $120.00 can be delivered by post (allowing up to 28 working days) at a rate of $18.00 or by a tracked courier at a rate of $49.00.

Orders above $120.00 are delivered by tracked courier at a rate of $49.00.

 

All prices shown exclude VAT.

 

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