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S6R2008V1A-XI10 2Mbit Asynchronous Fast SRAM
Sku:
S6R2008V1A-XI10
Features
- Fast Access Time - from 8ns
- CMOS Low Power Dissipation
- TTL Compatible Inputs and Outputs
- Fully Static Operation, No Clock or Refresh required
- Three State Outputs
- Industrial Temperature Range
- Long Term Supply Commitment
The high-speed Static Random Access Memory uses common input and output lines to simplify layout. There is an output enable pin which operates faster than address access time at read cycle so there is no los of speed.
The Memory allows that lower and upper byte access by data byte control(UB, LB).
The device is fabricated using advanced CMOS process, 6-TR based cell technology for reliable and cost effective performance, ideally suited for high-speed circuit technology.
The Memory is packaged in industry standard packages.
Access Time | 10ns |
---|---|
Memory Size | 2Mbit |
Organisation | 256K x 8 |
Supply Voltage | 3.3V |
Access Time (Family) | 8/10ns |
US/Canadian Customers
Orders below $110.00 can be delivered by Airmail at a rate of $9.00 (allow up to 10 working days) or by tracked courier at a rate of $30.00 (1-3 working days).
Orders above $110.00 are delivered by a tracked courier at a rate of $30.00 (1-3 working days).
Rest of World
Orders below $120.00 can be delivered by post (allowing up to 28 working days) at a rate of $18.00 or by a tracked courier at a rate of $49.00.
Orders above $120.00 are delivered by tracked courier at a rate of $49.00.
All prices shown exclude VAT.