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UT4101G-AE3-R P-Channel Enhancement mode Power MOSFET
Sku:
UT4101G-AE3-R
Features
- Fast switching speed
- Low on resistance
- Low gate voltage operation
The UTC UT4101G is P-channel enhancement mode Power MOSFET, designed with high cell density, fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages.
This device is suitable for use as a load switch or in PWM applications.
Drain Source Voltage | -20V |
---|---|
Drain Current | -2.4A |
Power | 1.25W |
On-state Resistance | 0.21Ω |
Reverse Recovery Time | 12.8ns |
Total Gate Charge (Qg) | 7.5nC |
Part Description | - |
US/Canadian Customers
Orders below $110.00 can be delivered by Airmail at a rate of $9.00 (allow up to 10 working days) or by tracked courier at a rate of $30.00 (1-3 working days).
Orders above $110.00 are delivered by a tracked courier at a rate of $30.00 (1-3 working days).
Rest of World
Orders below $120.00 can be delivered by post (allowing up to 28 working days) at a rate of $18.00 or by a tracked courier at a rate of $49.00.
Orders above $120.00 are delivered by tracked courier at a rate of $49.00.
All prices shown exclude VAT.