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  • Moisture sensitivity level: 1
  • RoHS 3(EU 2015/863)
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UT4101G-AE3-R P-Channel Enhancement mode Power MOSFET

Sku:

UT4101G-AE3-R

The UTC UT4101G is P-channel enhancement mode Power MOSFET, designed with high cell density, fast switching speed, low on-resistance, excellent thermal and electrical capabilities and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Technical Specification
Drain Source Voltage -20V
Drain Current -2.4A
Power 1.25W
On-state Resistance 0.21Ω
Reverse Recovery Time 12.8ns
Total Gate Charge (Qg) 7.5nC

US/Canadian Customers

Orders below $110.00 can be delivered by Airmail at a rate of $9.00 (allow up to 10 working days) or by tracked courier at a rate of $30.00 (1-3 working days).

Orders above $110.00 are delivered by a tracked courier at a rate of $30.00 (1-3 working days).

 

Rest of World

Orders below $120.00 can be delivered by post (allowing up to 28 working days) at a rate of $18.00 or by a tracked courier at a rate of $49.00.

Orders above $120.00 are delivered by tracked courier at a rate of $49.00.

 

All prices shown exclude VAT.

 

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